D. Gregušová: search on Z-Library

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1

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

K. Čičo, D. Gregušová, J. Kuzmík, M. Jurkovič, A. Alexewicz, M.-A. di Forte Poisson, D. Pogany, G. Strasser, S. Delage, K. Fröhlich

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 562 KB

english, 2012

2

Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures

K. Čičo, J. Kuzmík, D. Gregušová, R. Stoklas, T. Lalinský, A. Georgakilas, D. Pogany, K. Fröhlich

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 251 KB

english, 2007

3

TRAUMATIC STRESS, DISSOCIATION, AND LIMBIC IRRITABILITY IN PATIENTS WITH UNIPOLAR DEPRESSION BEING TREATED WITH SSRIs 1,2

BOB, PETR, SUSTA, MAREK, GREGUSOVA, ALICA, JASOVA, DENISA, RABOCH, JIRI, MISHARA, AARON

Journal:

Psychological Reports

Year:

2010

Language:

english

File:

PDF, 409 KB

english, 2010

4

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

Graff, A., Simon-Najasek, M., Altmann, F., Kuzmik, J., Gregušová, D., Haščík, Š., Jung, H., Baur, T., Grünenpütt, J., Blanck, H.

Journal:

Microelectronics Reliability

Year:

2017

Language:

english

File:

PDF, 2.59 MB

english, 2017

5

Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature

J. Betko, P. Kordos, S. Kuklovsky, A. Förster, D. Gregusová, H. Lüth

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 360 KB

english, 1994

6

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

D. Gregušová, J. Bernát, M. Držík, M. Marso, J. Novák, F. Uherek, P. Kordoš

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 201 KB

english, 2005

7

Dissociation, cognitive conflict and nonlinear patterns of heart rate dynamics in patients with unipolar depression

Petr Bob, Marek Susta, Alica Gregusova, Denisa Jasova

Journal:

Progress in Neuro-Psychopharmacology and Biological Psychiatry

Year:

2009

Language:

english

File:

PDF, 262 KB

english, 2009

8

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

Mikulics, M., Kordos, P., Gregusova, Dagmar, Adam, R., Kocan, Martin, Wu, Shuai, Zhang, J., Sobolewski, Roman, Grutzmacher, D., Marso, Michel

Journal:

IEEE Photonics Technology Letters

Year:

2011

Language:

english

File:

PDF, 420 KB

english, 2011

9

Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing

Karol Čičo, Dagmar Gregušová, Štefan Gaži, Ján Šoltýs, Ján Kuzmík, Jean-François Carlin, Nicolas Grandjean, Dionýz Pogany, Karol Fröhlich

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 193 KB

english, 2010

10

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

P. Kordoš, D. Gregušová, R. Stoklas, Š. Gaži, J. Novák

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 274 KB

english, 2008

11

Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.

Journal:

Materials Science in Semiconductor Processing

Year:

2019

Language:

english

File:

PDF, 483 KB

english, 2019

12

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 gate dielectric grown by atomic layer deposition

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 1.40 MB

english, 2018

13

The effect of oxygen in WNxfilms on thermal stability of WNx/GaAs interfaces

D. Gregušová, T. Lalinský, ž. Mozolová, J. Breza, P. Vogrinčič

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

14

Properties of WNx/GaAs Schottky contacts prepared by ion implantation of nitrogen

T. Lalinsky, J. Kuzmík, D. Gregušová, Ž. Mozolová, J. Breza, M. Feciško, P. Seidl

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1992

Language:

english

File:

PDF, 435 KB

english, 1992

15

Characterization of WNx metallization prepared by ion implantation of nitrogen

D Gregušová, T Lalinský, Ž Mozolová, D Machajdik, I Pochaba, I Vavra, M Porges

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 707 KB

english, 1994

16

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

D. Donoval, M. Florovič, D. Gregušová, J. Kováč, P. Kordoš

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 206 KB

english, 2008

17

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Tapajna, Milan, Killat, Nicole, Palankovski, Vassil, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Kuball, Martin, Kuzmik, Jan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.66 MB

english, 2014

18

The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors

Kordoš, P, Kúdela, P, Gregušová, D, Donoval, D

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 449 KB

english, 2006

19

Optimization of UV-assisted wet oxidation of GaAs

Gucmann, Filip, Kúdela, Róbert, Rosová, Alica, Dobročka, Edmund, Mičušík, Matej, Gregušová, Dagmar

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 2.39 MB

english, 2017

20

Vortex Dynamics in Ferromagnetic Nanoelements Observed by Micro-Hall Probes

Ščepka, T., Šoltýs, J., Precner, M., Fedor, J., Tóbik, J., Gregušová, D., Gucmann, F., Kúdela, R., Cambel, V.

Journal:

Acta Physica Polonica A

Year:

2014

Language:

english

File:

PDF, 393 KB

english, 2014

21

Investigation of ‘surface donors’ in Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.

Journal:

Applied Surface Science

Year:

2017

Language:

english

File:

PDF, 658 KB

english, 2017

22

Investigation of the GaAs-pyramids overgrowth using MOCVD

D. Gregušová, V. Cambel, R. Kúdela, J. Šoltỳs, I. Kostiè, G. Attolini, C. Pelosi

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 543 KB

english, 2003

23

On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography

D. Gregušová, J. Martaus, J. Fedor, R. Kúdela, I. Kostič, V. Cambel

Journal:

Ultramicroscopy

Year:

2009

Language:

english

File:

PDF, 409 KB

english, 2009

24

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD

Stoklas, R., Gregusova, D., Blaho, M., Cico, K., Frohlich, K., Novak, J., Kordos, P.

Year:

2014

Language:

english

File:

PDF, 169 KB

english, 2014

25

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P.

Journal:

Applied Surface Science

Year:

2016

Language:

english

File:

PDF, 806 KB

english, 2016

26

Current conduction mechanism and electrical break-down in InN grown on GaN

Kuzmik, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1006 KB

english, 2017

27

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, Stefan, Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 329 KB

english, 2013

28

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Early stage degradation of InAlN/GaN HEMTs during electrical stress

Tapajna, M., Gregusova, D., Cico, K., Fedor, J., Carlin, J.-F., Grandjean, N., Killat, N., Kuball, M., Kuzmik, J.

Year:

2012

Language:

english

File:

PDF, 145 KB

english, 2012

29

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smooth GaN recess wet photoelectrochemical etching

Gregusova, D., Novak, J., Hardtdegen, H., Soltys, J., Kostic, I., Gregus, J., Kordos, P.

Year:

2004

Language:

english

File:

PDF, 673 KB

english, 2004

30

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT structures with Al2O3 gate dielectric prepared by various techniques

Gucmann, F., Gregusova, D., Valik, L., Tapajna, M., Hascik, S., Husekova, K., Frohlich, K., Pohorelec, O., Kuzmik, J.

Year:

2016

File:

PDF, 548 KB

2016

31

Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH, and H2O2

D. Gregušová, P. Eliáš, L. Malacký, R. Kúdela, J. Škriniarová

Journal:

physica status solidi (a)

Year:

1995

Language:

english

File:

PDF, 401 KB

english, 1995

32

Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide

D. Gregušová, R. Stoklas, K. Čičo, G. Heidelberger, M. Marso, J. Novák, P. Kordoš

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

33

New resin gel for uranium determination by diffusive gradient in thin films technique

Michaela Gregusova, Bohumil Docekal

Journal:

Analytica Chimica Acta

Year:

2011

Language:

english

File:

PDF, 191 KB

english, 2011

34

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 949 KB

english, 2014

35

Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M, Hardtdegen, H, Gregušová, D, Sofer, Z, Šimek, P, Trellenkamp, St, Grützmacher, D, Lüth, H, Kordoš, P, Marso, M

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 68 KB

english, 2012

36

Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates

P. Eliáš, D. Gregušová, J. Martaus, I. Kostič

Year:

2006

Language:

english

File:

PDF, 666 KB

english, 2006

37

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Mikulics, M., Arango, Y. C., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H.

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 2.55 MB

english, 2016

38

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown A12O3 gate dielectric

Tapajna, M., Husekova, K., Pohorelec, O., Valik, L., Hascik, S., Gucmann, F., Frohlich, K., Gregusova, D., Kuzmlk, J.

Year:

2016

File:

PDF, 219 KB

2016

39

III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O 2 plasma-oxidized GaAs cap

Gucmann, Filip, Kúdela, Róbert, Kordoš, Peter, Dobročka, Edmund, Gaži, Štefan, Dérer, Ján, Liday, Jozef, Vogrinčič, Peter, Gregušová, Dagmar

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 833 KB

english, 2015

40

New approach to local anodic oxidation of semiconductor heterostructures

Jozef Martaus, Dagmar Gregušová, Vladimír Cambel, Robert Kúdela, Ján Šoltýs

Journal:

Ultramicroscopy

Year:

2008

Language:

english

File:

PDF, 724 KB

english, 2008

41

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide

Stoklas, R., Gregusova, D., Novak, J., Kordos, P., Tajima, M., Hashizume, T.

Year:

2012

Language:

english

File:

PDF, 152 KB

english, 2012

42

RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$

Kordos, P., Mikulics, M., Fox, A., Gregusova, D., Cico, K., Carlin, J.-F., Grandjean, N., Novak, J., Frohlich, K.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 108 KB

english, 2010

43

GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs

Gregušová, Dagmar, Kúdela, Róbert, Eliáš, Peter, Šoltýs, Ján, Kostič, Ivan, Cambel, Vladimír

Journal:

Journal of Micromechanics and Microengineering

Year:

2010

Language:

english

File:

PDF, 751 KB

english, 2010

44

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 by atomic layer deposition: leakage current and density of states reduction

Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.05 MB

english, 2017

45

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 766 KB

english, 2017

46

Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

Kuzmik, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, M., Meneghesso, G., Würfl, J.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 750 KB

english, 2014

47

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties

Gregusova, Dagmar, Kudela, Robert, Stoklas, Roman, Blaho, Michal, Gucmann, Filip, Fedor, Jan, Kordos, Peter

Year:

2012

Language:

english

File:

PDF, 403 KB

english, 2012

48

[IEEE 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) - Taormina (2018.4.9-2018.4.12)] 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) - Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell

Chvala, Ales, Nagy, Lukas, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Satka, Alexander, Blaho, Michal, Gregusova, Dagmar, Kuzmik, Jan

Year:

2018

Language:

english

File:

PDF, 1.32 MB

english, 2018

49

Novel Hall sensors developed for magnetic field imaging systems

Vladimír Cambel, Goran Karapetrov, Valentyn Novosad, Elena Bartolomé, Dagmar Gregušová, Ján Fedor, Robert Kúdela, Ján Šoltýs

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2007

Language:

english

File:

PDF, 516 KB

english, 2007

50

High resolution characterization of uranium in sediments by DGT and DET techniques ACA-S-12-2197

Gregusova, Michaela, Docekal, Bohumil

Journal:

Analytica Chimica Acta

Year:

2013

Language:

english

File:

PDF, 659 KB

english, 2013

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